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THE PHYSICAL MODEL OF NEGATIVE ELECTRON AFFINITY PHOTOEMITTERSVAN LAAR J.1973; ACTA ELECTRON.; FR.; DA. 1973; VOL. 16; NO 3; PP. 215-227; ABS. FR. ALLEM.; BIBL. 53 REF.Serial Issue

IMPACT DE L'ELECTRO-AFFINITE NEGATIVE SUR LA TECHNOLOGIE DES TUBES A VIDEPIETRI G.1973; ACTA ELECTRON.; FR.; DA. 1973; VOL. 16; NO 3; PP. 261-265; MEME DOC. ANGLSerial Issue

Intense source of monochromatic electrons: photoemission from GaAsFEIGERLE, C. S; PIERCE, D. T; SEILER, A et al.Applied physics letters. 1984, Vol 44, Num 9, pp 866-868, issn 0003-6951Article

Photoemission study of the negative electron affinity surfaces of O/Cs/Si(001)2×1 and O/K/Si(001)2×1ABUKAWA, T; ENTA, Y; KASHIWAKURA, T et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1990, Vol 8, Num 4, pp 3205-3209, issn 0734-2101Article

Negative electron affinity gallium arsenide photocathode grown by molecular beam epitaxyNARAYANAN, A. A; FISCHER, D. G; ERICKSON, L. P et al.Journal of applied physics. 1984, Vol 56, Num 6, pp 1886-1887, issn 0021-8979Article

THE SILICON COLD CATHODEKOHN ES.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 3; PP. 321-329; BIBL. 17 REF.Serial Issue

SUR LA QUESTION DU RENDEMENT QUANTIQUE DES PHOTOCATHODES AVEC AFFINITE ELECTRONIQUE NEGATIVEBRAGIN NV; BONDAR SA; GAVANIN VA et al.1980; RADIOTEKH. I ELEKTRON.; SUN; DA. 1980; VOL. 25; NO 6; PP. 1244-1248; BIBL. 11 REF.Article

FOTOCATODI AD AFFINITA ELETTRONICA NEGATIVA MATERIALI IIIE V. = PHOTOCATHODE A AFFINITE ELECTRONIQUE NEGATIVE MATERIAU III ET VMALAGUZZI VALERI A.1976; ANTENNA; ITAL.; DA. 1976; VOL. 48; NO 2; PP. 63-64Article

CALCULATIONS ON THE PERFORMANCE OF GALLIUM ARSENIDE PHOTOCATHODES = CALCULS DES CARACTERISTIQUES DES PHOTOCATHODES A L'ARSENIURE DE GALLIUMALLEN GA.1973; ACTA ELECTRON.; FR.; DA. 1973; VOL. 16; NO 3; PP. 229-236; ABS. FR. ALLEM.; BIBL. 12 REF.Serial Issue

ELEKTRONENEMITTER NEGATIVER ELEKTRONENAFFINITAET ALS PHOTOKATHODEN = EMETTEURS D'ELECTRONS A AFFINITE D'ELECTRONS NEGATIVE COMME PHOTOCATHODESGORDAN P.1972; WISSENSCH. BER. A.E.G.-TELEFUNKEN; DTSCH.; DA. 1972; VOL. 45; NO 3; PP. 127-129; ABS. ANGL. ESP. FR.; BIBL. 17 REF.Serial Issue

REFLECTION AND TRANSMISSION SECONDARY EMISSION FROM GAASMARTINELLI RU; SCHULTZ ML; GOSSENBERGER HF et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 11; PP. 4803-4804; BIBL. 18 REF.Serial Issue

TRANSMISSION SILICON PHOTOCATHODES.HOWORTH JR.1975; G.E.C.J. SCI. TECHNOL.; G.B.; DA. 1975; VOL. 42; NO 3; PP. 109-115; BIBL. 20 REF.Article

STRUCTURAL AND ELECTRONIC MODEL OF NEGATIVE ELECTRON AFFINITY ON THE SI/CS/O SURFACELEVINE JD.1973; SURF. SCI.; NETHERL.; DA. 1973; VOL. 34; NO 1; PP. 90-107; BIBL. 1 P.Serial Issue

A proposal for a new type of thin-film field-emission display by edge breakdown of MIS structureKONOPSKY, V. N.Journal of physics. D, Applied physics (Print). 1998, Vol 31, Num 6, pp 617-621, issn 0022-3727Article

Electron emission by current injection from n-type diamond film surface with negative electron affinityTAKEUCHI, D; MAKINO, T; KATO, H et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 9, pp 2093-2098, issn 1862-6300, 6 p.Conference Paper

Photoemission characteristics of diamond filmsVOUAGNER, D; SHOW, Y; KIRALY, B et al.Applied surface science. 2000, Vol 168, Num 1-4, pp 79-84, issn 0169-4332Conference Paper

Negative electron affinity on polycrystalline diamond surface induced by lithium fluoride depositionWONG, K. W; WANG, Y. M; LEE, S. T et al.Diamond and related materials. 1999, Vol 8, Num 10, pp 1885-1890, issn 0925-9635Article

Degradation of a gallium-arsenide photoemitting NEA surface by water vapourDUREK, D; FROMMBERGER, F; REICHELT, T et al.Applied surface science. 1999, Vol 143, Num 1-4, pp 319-322, issn 0169-4332Article

NEA peak of the differently terminated and oriented diamond surfacesDIEDERICH, L; AEBI, P; KÜTTEL, O. M et al.Surface science. 1999, Vol 424, Num 2-3, pp L314-L320, issn 0039-6028Article

Protection of photomultipliers from overloadAPLIN, P. S.Measurement science & technology (Print). 1997, Vol 8, Num 3, pp 340-342, issn 0957-0233Article

EMISSION DISTRIBUTIONS FROM NEA COLD CATHODESHATANAKA Y; SUKEGAWA T; ANDO T et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 5; PP. 871-876; BIBL. 15 REF.Article

TRAVAIL DE SORTIE DE PHOTOCATHODES A AFFINITE ELECTRONIQUE NEGATIVE A BASE DE COMPOSES GAJNASKOROTKIKH VL; KORINFSKIJ AD; MATYASH AA et al.1977; FIZ. TVERD. TELA; S.S.S.R.; DA. 1977; VOL. 19; NO 10; PP. 2869-2871; BIBL. 8 REF.Article

THE APPLICATION OF SEMICONDUCTORS WITH NEGATIVE ELECTRON AFFINITY SURFACES TO ELECTRON EMISSION DEVICES.MARTINELLI RU; FISHER DG.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 10; PP. 1339-1360; BIBL. 2 P.Article

GAP NEGATIVE-ELECTRON-AFFINITY COLD CATHODESSUKEGAWA T; KAN H; NAKAMURA T et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3780-3782; BIBL. 15 REF.Article

NEGATIVE AFFINITY 3-5 PHOTOCATHODES: THEIR PHYSICS AND TECHNOLOGY.SPICER WE.1977; APPL. PHYS.; GERM.; DA. 1977; VOL. 12; NO 2; PP. 115-130; BIBL. 51 REF.Article

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